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academies
November 22-23, 2018 | Paris, France
Journal of Materials Science and Nanotechnology | Volume: 2
Materials Physics and Materials Science
International Conference on
Polycrystalline Gallium Nitride thin film and bulk for highly efficient devices: A new process and
approach
N Zainal
Universiti Sains Malaysia, Malaysia
I
nterest inpolycrystallinegalliumnitride (GaN)material isdriven
by rapid development of IIIV nitrides-based devices despite
of its inevitable notorious formation of grain boundaries. As
compared to its single crystal counterpart, polycrystalline GaN
can be produced in variety of size through simple and cost-
effectivemeans. By producing thematerial inbulk, it could serve
as a native substrate for GaN based devices of various sizes.
This work will present a new way of producing polycrystalline
GaN thin film using a combined technique of e-beam
evaporator with a successive ammonia annealing. The role
of patterned substrate with different profile and the effect
of annealing parameters on the surface and crystalline
quality of the thin film will be discussed. The results from
these experiments have been used as the input to produce a
freestanding flat bulk polycrystalline GaN with a thickness of
50µm using the same producers as above and followed by a
wet chemical etching for the substrate removal. The surface
of the freestanding bulk sample is 2 times smoother than
commercial ones. Our grouphas also successfully demonstrated
a freestanding patterned polycrystalline GaN for the first time.
e:
norzaini@usm.my