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Journal of Materials Science and Nanotechnology | Volume 3
October 07-08, 2019 | Frankfurt, Germany
Materials Science and Engineering
3
rd
International Conference on
Mater Sci Nanotechnol, Volume 3
Raman spectroscopy of CVD graphene during the transfer process from copper to
SiO2/Si substrates
Claudia Bautista-Flores
Tecnologico de Monterrey, México
R
aman spectrum of CVD graphene was monitored during
the transfer process, from the growing copper substrate
to the final silicon substrate, passing through different liquids
used to dissolve copper and to clean the resulting carbon film.
The position of G and 2D peaks shifted when graphene was
on the surface of different liquids. The largest Raman shift
occurred for ferric nitrate and nitric acid solutions; this result
showsthatthesesolutionsinducedthep-typecharacterofCVD
graphene. The critical finding is that the situation of graphene
(strain and doping) deposited via a CVD method changes
when it is translated from the original to the final substrate.
e
:
claudia.bautistaf@gmail.com