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April 15-16, 2019 | Frankfurt, Germany
Applied Physics & Laser, Optics and Photonics
International Conference on
Materials Science and Nanotechnology | Volume: 3
In-situ
laser interference modulated MBE growth of site-controlled quantum dots
Changsi Peng
1,2
, Zhenwu Shi
1
, Dayun Huo
1
, Changwei Deng
1
, Chen Chen
1
, Linyun Yang
1
, Lili Miu
1
and
Xinning Yang
1
1
Soochow University, China
2
University of Bedfordshire, UK
W
e have demonstrated a new approaching
to grow defect-free site-controlled epitaxial
quantum dots (QDs) by MBE. A unique novel MBE
system was designed by combining an III-V epitaxial
growthcapabilitywith in-situdirect laser interference
nano-patterning (LINP). Indium atoms are selectively
desorbed away from the GaAs substrate at points
of high light intensity generated within the in-situ
laser interference patterns, encouraging selective
nucleation and resulting in the highly controllable
periodic formation of two dimensional defect-free
QDs arrays.
Nanostructuredmaterials are at the forefront of 21st
century device innovation. The path of technological
progress now takes us to dimensions of a few
nanometers, at which structured materials interact
at the dimensions of molecules and have electronic
properties governed by quantum interactions. There
is enormous potential to transform our approaches
to computing, sensing, communications, diagnosis
and even perhaps the treatment of disease. Yet we
do not possess all the tools to develop the devices
required at this challenging dimension. We need
to explore innovative production methods which
could overcome the limitations of conventional
routes and become key enabling technologies for
the second quantum revolution. Our research on
site-controlled QDs is one such novel approach,
which seeks to develop a transformational process
for quantum-structure-arrays (QSAs). The method
combines the top-down LINP with the capabilities of
bottom-up structuring by self-assembly, to provide
a cost-effective state of the art capability for next
generation ordered QSAs. The resulting arrays will
have unprecedented site and dimensional control
and will be free of process defects.
e
:
changsipeng@suda.edu.cn