8 / 23
allied
academies
Materials-Metals 2017
Page 44
November 16-17, 2017 Paris, France
13
th
Annual Conference on
Materials Science, Metal and Manufacturing
Journal of Materials Science and Nanotechnology
Volume 1 Issue 2
Pulsed laser deposition of Fe
2
TiSn thin films for
thermoelectric applications
S Garabagiu
1
, D I Bilc
1
, D Marconi
1
, S Macavei
1
, L Barbu
1
, S A Porav
1
, B
Cozar
1
, R Gavrea
2
, R Hirian
2
, D Benea
2
, M Coldea
2
and
V Pop
2
1
National Institute for Research and Development of Isotopic and Molecular
Technologies, Romania
2
Babeş -Bolyai University, Romania
T
hermoelectrics are promising to address energy issues
but full potential exploitation requires improvements
in their performance (large power factors and low thermal
conductivities). Advanced thermoelectric materials from the
class of Fe-based full Heusler semiconductors, Fe
2
YZ, have
been theoretically predicted to have very large power factors
and to possess low-dimensional electronic transport even at
bulk level. The aim of the present work was to grow thin films
of Fe
2
TiSn full Heusler compounds on magnesium oxide
(MgO) buffer layers deposited on Si (100) using pulsed laser
deposition (PLD). The buffer layer of MgO has been deposited
by PLD onto Si (100) substrates, and its structure has been
optimized with the preferential orientation along (100). Then,
Fe-based Heusler compounds have been deposited onto
MgO (100), using bulk targets of Fe
2
TiSn. By optimizing the
deposition parameters (substrate temperature, laser fluence
and frequency), it was possible to control the stoichiometry,
crystallinity and morphological properties of Fe
2
TiSn thin
films. We present the structural and morphological properties
of these films investigated by X-ray diffraction, Atomic Force
Microscopy and Scanning Electron Microscopy analysis.
Recent Publications
• Bilc DI, Hautier G, Waroquiers D, Rignanese GM,
Ghosez Ph (2015) Low-Dimensional Transport and Large
Thermoelectric Power Factors in Bulk Semiconductors
by Band Engineering of Highly Directional Electronic
States. Physical Review Letter 114:136601.
• Cáceres D, Vergara I, and Gonzalez R (2003)
Microstructural characterization of MgO thin films
grown by radio-frequency sputtering. Target and
substrate-temperature effect. J. Appl. Phys. 93:4300.
• Niu F, Meler AL, Wessels BW (2006) Epitaxial growth
and strain relaxation of MgO thin films on Si grown by
molecular beam epitaxy. J. Vac. Sci. Technol. B 24:2586.
• Kaneko S, Funakubo H, Kadowaki T, Hirabayashi
Y, Akiyama K (2008) Cubic-on-cubic growth of a
MgO(001) thin film prepared on Si(001) substrate at low
ambient pressure by the sputtering method. Europhys.
Lett. 81:46001.
• Kaneko S, Ito T, Soga M, Motoizumi Y, Yasui M,
Hirabayashi Y, Ozawa T, Yoshimoto M (2013) Growth
of nanocubic MgO on silicon substrate by pulsed laser
deposition. Jap. J. Applied Physics 52:01AN02.
Biography
Sorina Garabagiu has her expertise in pulsed laser deposition (PLD) of thin
films, and their characterization using microscopic techniques (AFM, SEM) and
spectroscopy (FTIR, UV-vis, fluorescence). She has performed PLD depositions
of oxide materials, as buffer layers for advanced materials depositions, and
semiconducting Heusler compounds, as potential thermoelectric materials.
She also fabricated thin films of oxide materials by anodization, and arrays
of metallic nanowires embedded into oxidic matrices, and 2D arrays of noble
metal nanoparticles used for the design of electrochemical bio-sensors.
sorina.garabagiu@itim-cj.roS Garabagiu et al., Mater Sci Nanotechnol 2017, 1:2