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Journal of Materials Science and Nanotechnology | Volume 2
July 23-25, 2018 | Moscow, Russia
Materials Science and Engineering
International Conference on
Hybrid resonant organic-inorganic Nanostructures for Optoelectronics
V M Agranovich
Institute for Spectroscopy RAS, Russia
In hybrid resonant organic/inorganic nanostructures there
is a combination of good charge transport properties of
inorganic semiconductors and good light-emitting properties of
organic substances(high quantum yield, colour detuning). Also
it has the excitons of small radius for typical organic materials
and Wannier-Mott excitons for inorganic semiconductors
having large radius excitons and creating the basis for modern
semiconductor industry. Organic and inorganic component can
have electronic excitations with nearly equal energies and such
contacting structures collect the best properties of both classes
of materials in hybrid structure. Theoretically such structures
have been investigated earlier. At pumping of such structures
we can have the irreversible non-contact and nonradiative
energy transfer from inorganic quantumwell toorganic emitting
material. Important that in the beginning of this century such
effect indeed was observed and continue to be observed for
many different organic-inorganic nanostructures. In all earlier
considered hybrid structure it was assumed that the energy of
excitons in semicondactor layer is large in comparison with the
energy of exciton in the organic layer and pumping the energy
was transfered from semiconductor to organics. In our recent
papers we considered the hybrid structures where energy of
exciton in organic layer is large in comparison with energy of
exciton in semiconductor. The properties of hybrid structure
in this case are very different and in this talk the results of a
new approach arising with pumping of semiconductor thin film
through overlayer is going to demonstrated.
Speaker Biography
V M Agranovich received PhD in Kiev, degree of Doctor of Science from Institute of
Chemical Physics(Moscow) and in 1963 he received the Professor Diploma from
VAK (Commission of Government). Between 1956 and 1969 he worked as a Head of
Theoretical Laboratory of Physical- Energetical Institute in Obninsk and in 1969 he
joined the newly founded Institute of Spectroscopy of the Russian Academy of Science
(ISAN) as Head of the Theoretical Department. He was in this position during 40 years
and now he is a Principal Investigator of ISAN. He published about 400 papers, four
books and many invited chapters in contributed volumes.For about 20 years he was
the regional Editor of Solid State Communications and before Perestroika he was
main organizer of bilateral workshops and conferences USSR-USA, USSR-Germany.
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