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Page 29
Journal of Chemical Technology and Applications | Volume 2
Annual Spring Conference and Expo on
April 04-05, 2018 | Miami, USA
Chemical Engineering: From
Materials Engineering to Nanotechnology
allied
academies
T
he memory effects in a memristor can be realized through
the switching behavior between two distinct resistance
states, low resistance state (LRS) and high resistance state
(HRS) driven by low pulse voltages. ZnO-based thin films
such as undoped ZnO, Mg-doped ZnO, Na-doped ZnO and
Mn-doped ZnO have attracted considerable interest as
promising resistive switching materials. Gallium doping
electrically modulates the behavior of ZnO to suit low power
switching behavior. Non-lattice oxygen ions and oxygen
vacancies as detected by XPS are found to play important
role in imparting forming-free resistive switching behavior.
e:
phd1401102003@iiti.ac.inLow power dual ion beam sputtered high endurance resistive switch with memristive behavior
Amitesh Kumar, Mangal Das, Brajendra S Sengar, Md Arif Khan, Abhinav Kranti
and
Shaibal Mukherjee
Indian Institute of Technology Indore, India