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Biotechnology Congress 2018 & Emerging Materials 2018
Biomedical Research
|
ISSN: 0976-1683
|
Volume 29
S e p t e m b e r 0 6 - 0 7 , 2 0 1 8 | B a n g k o k , T h a i l a n d
allied
academies
Joint Event on
EMERGING MATERIALS AND NANOTECHNOLOGY
BIOTECHNOLOGY
&
Annual Congress on
Global Congress on
Biomed Res 2018, Volume 29 | DOI: 10.4066/biomedicalresearch-C4-011
IDENTIFICATION OF REFERENCE
GENES FOR REAL-TIME PCR
GENE EXPRESSION STUDIES
IN DEVELOPING SEEDLING OF
CYAMOPSIS TETRAGONOLOBA
UNDER NITROGEN STRESS
Poonam S Jaiswal, Navneet Kaur
and
Gursharn
Singh Randhawa
Indian Institute of Technology Roorkee, India
G
uar (
Cyamopsis tetragonoloba
) is an important industrial
crop because of many industrial applications of
galactomannan gum present in its seeds. It, being a legume
crop, can fulfil its nitrogen requirement through biological
nitrogen fixation. However, this crop usually encounters
nitrogen deficiency during the initial stages of crop growth
whennitrogenfixingnoduleshavenot been fullydeveloped.The
knowledge about genes of guar involved in various processes
can help in developing improved varieties of this crop. qRT-PCR
is a preferred technique for accurate quantification of gene
expression data. This technique requires use of appropriate
reference genes from the crop to be studied. Such genes have
not been yet identified in guar. In the present study, expression
stabilities of 10 candidate reference genes, viz.,
CYP, ACT
11, EF-1α, TUA, TUB, ACT 7, UBQ 10, UBC 2, GAPDH
and
18S
rRNA
were evaluated in shoot and root tissues of guar (RGC-
1066 variety) under nitrogen stress. Four different algorithms,
geNorm, NormFinder, BestKeeper and ΔCt approach were
used to assess the expression stabilities of reference genes
and the results obtained were integrated into comprehensive
stability rankings. The study indicated that
CYP, TUA and UBC
2
genes were the most stable reference genes in guar under
nitrogen stress whereas
EF-1α
gene was the most unstable
reference gene. The
CYP, TUA
and
UBC 2
genes were the most
suitable reference genes for accurate normalization of the
gene expression data under nitrogen stress. Our findings are
expected to provide a boost to gene expression studies in guar
under nitrogen stress. Such studies are likely to improve our
understanding of molecular mechanisms of nitrogen uptake
in guar seedling and facilitate research initiatives to determine
genes expressing under nitrogen stress in this industrially
important crop.
III-V/ SI INTEGRATION FOR NEXT
GENERATION HIGH SPEED LOW
POWER ELECTRONICS
Edward Y Chang
National Chiao Tung University, Taiwan
T
he integration of III-V on Si substrate provides the platform
for future high-speed electronic devices due to the
high mobility of III-V materials. Among the III-V compound
semiconductors, InxGa1-xAs and AlxGa1-xSb are the most
promising materials for high speed, low power consumption
electronics such as MOSFET, FinFET and TFET due to their
low electron effective mass. Simulation and epitaxial growth
of InxGa1-xAs and AlxGa1-xSb materials on Si substrate for
high speed, low power electronics will be presented in the
presentation. The frequency dispersion of accumulation
capacitance (Δcacc) and interfacial trap density (Dit) are 3.06
%/dec and 3.2x1012cm-2eV-1 for In0.53Ga0.47As MOSCAPs
on Si substrate. A reasonable Dit level with high FL movement
efficiency indicates low acceptor-like traps and good carrier
transport properties for MOSFET applications.
edc@mail.nctu.edu.tw