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November 13-14, 2017 Paris, France
5th International Conference on
PLASMA CHEMISTRY AND
PLASMA PROCESSING
Journal of Biotechnology and Phytochemistry
Volume 1, Issue 2 Plasma Chemistry 2017
Dry etch profile of contact hole in inductively
coupled plasma
Nomin Lim1, Changmok Kim1, Ki Han2, Yeon-Ho Im3, Hyun woo Lee4 and
Kwang-Ho Kwon1
1Korea University, Republic of Korea
2Nanophotonics Research Center-Korea Institute Science & Technology, Republic
of Korea
3Chunbuk National University, Republic of Korea
4Hanseo University, Republic of Korea
Plasma is widely used in semiconductor device processes.
Among them, the plasma etching process is a patterning
method for removing a substrate material by using ions, reactive
gases or radicals generated by plasma, and it is an indispensable
process to provide the precision of process, miniaturization, and
low damage. There is an increasing need to form fine contact
holes for solving the problems caused by distortion and tilting
of the etched profile. On the other hand, the tilted etched profile
had got a big attention by etching process engineers. However,
this phenomenon was not evaluated in detail. Any detailed
researching results on the tilted etched profile have not been
suggested, yet. Accordingly, in this work, the phenomenon
of the tilted etched profile was studied in detail. In this work,
the photoresist (PR) was used as a mask and plasma-enhanced
chemical vapor deposited silicon oxide (SiO2) of 2 μm thickness
was used as a dielectric material. In order to analyze the tilting
phenomenon, a dielectric (plastic) block and a metal (aluminum)
block were used and the sample was put on the material blocks.
For this work, the material blocks were fabricated with various
height (T = 0, 0.25, 0.5, 1 cm). After the contact hole sample
was placed on the prepared blocks, contact hole etching was
performed. We performed the inductively coupled C4F 8/CH2F2/
O2/Ar plasma to etch SiO2 films. The total gas ratio was 120 sccm.
The source power, bias power, and process pressure were 50W,
400W, and 10mTorr, respectively. Scanning electron microscope
(SEM) was used to identify the contact hole angle and etching
profile after contact hole etching. The higher the block height,
the larger the degree of contact hole tilting. Finally, we discuss
How the behaviour of plasma ions and electric field at the edge
affected the contact hole etching characteristics.
Biography
Nomin Lim is from Korea University belongs to the department of control and
instrumentation engineering. His research is on the semiconductor process using
plasma under the guidance of professor Kwang Kwang-Ho. He is conducting
research to systematically identify the mechanism of etching through analysis. His
content of the study was published in Japanese Journal of Applied Physics, Journal
of nano science and nanotechnology, and thin solid films etc.
Nomin Lim et al., J Biot Phyt 2017