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allied
academies
Materials-Metals 2017
Page 53
November 16-17, 2017 Paris, France
13
th
Annual Conference on
Materials Science, Metal and Manufacturing
Journal of Materials Science and Nanotechnology
Volume 1 Issue 2
Tuning gallium concentration to enhance
absorption coefficient of CuIn
1-x
Ga
x
Se
2
single
nanowire
Mourad Rzaizi, A Oueriagli
and
D Abouelaoualim
Cadi Ayyad University, Morocco
N
anowires offer new opportunities for nanoscale
quantum optics and cell photovoltaic. These advantages
include reduced reflection, extreme light trapping, improved
band gap tuning. The I– III–VI
2
family of semiconducting
compounds, which includes CIGS has been widely used in
photovoltaic because of its many advantages. We present
a numerical investigation of effect concentration gallium
and size on absorption coefficient of CuIn
1-x
Ga
x
Se
2
single
nanowire. Within the envelop-function framework, the effect
concentration gallium and size on the optical absorption
coefficient are studied for the intraband transitions in CuIn
1-
x
Ga
x
Se
2
single nanowire. Our results show that the parameters
of nanostructure and incident optical intensity have a great
effect on the optical characteristics of these nanostructures.
Thus, the absorption coefficients which can be suitable for
great performance optical can be easily obtained by tuning
the concentration gallium.
mouradrz1@gmail.comMater Sci Nanotechnol 2017, 1:2