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Mater Sci Nanotechnol 2017

Volume 1 Issue 3

Magnetic Materials 2017

Page 97

October 09-10, 2017 London, UK

International Conference on

Phase diagram for the O(n) model with defects

of “random local field” type and verity of the

Imry-Ma theorem

A S Sigov

Moscow Technological University, Russian Federation

A

fter the publication in 1975 the classical paper by Imry

and Ma, the viewpoint was firmly established in the

literature that at space dimensions d<4 the introduction of

an arbitrarily small concentration of defects of the "random

local field" type in a system with continuous symmetry of

the

n

-component vector order parameter (O

(n)

model) leads

to the long-range order collapse and to the occurrence of a

disordered state, which in what follows will be designated

as the Imry-Ma state and the statement given above will be

named the Imry-Ma theorem. An anisotropic distribution

of the directions of defect-induced random local fields in

the order parameter

n

-dimensional space gives rise to the

effective anisotropy in the system. Evaluation of the effective

anisotropy constant K

eff

for strong anisotropic distributions

in the order of magnitude gives the value K

eff

~

x(hl

)^2 /

JS^2, where

x

is the defect concentration, h

l

is the local field

induced by

l

th

defect, J is the exchange interaction constant

between neighboring spins and the brackets denote averaging

over defects. The Imry-Ma theorem breaks down due to

existence of the “easy axis” anisotropy induced by the defects

designed initially for breaking down the long-range order. In

the case of slightly anisotropic distribution of the fields, there

exists a critical concentration of defects, if exceeded the Imry-

Ma inhomogeneous state can exist as an equilibrium one. In

the case of strongly anisotropic distribution of the fields, the

Imry-Ma inhomogeneous state is completely suppressed and

the state with the long-range ordering is realized at any defect

concentration.

assigov@yandex.ru

Materials Science and Nanotechnology