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Mater Sci Nanotechnol 2017
Volume 1 Issue 3
Magnetic Materials 2017
Page 95
October 09-10, 2017 London, UK
International Conference on
Effect of a strain on the magnetotransport
properties of Bi wires
Elena P Condrea
Institute of Electronic Engineering and Nanotechnologies, Academy of Science
of Moldova, Republic of Moldova
T
he presented investigations of the magnetotransport
measurements of Bi wires complement the series of
recently published experimental results on bulk Bi in high
magnetic field. The design of measurements in the magnetic
field was diversified by using uniaxial strain directed along
the wire axis. By combining high magnetic field and strain,
the electronic structure of the bismuth wires was modified;
as a result, the quantum limit for light and heavy electrons
could be changed in different ways. Measurements of the
longitudinal magnetoresistance in the magnetic field of up to
35 T oriented along the bisector axis of Bi wires have revealed
an anomaly in a magnetic field far above the quantum
limit of the electrons: a sharp peak of MR at 33T (figure 1).
Investigation of magnetoresistance under uniaxial strain has
revealed that the sharp peak of the magnetoresistance at 33
T is reproduced in lower magnetic fields at 28 T according to
a decrease in the light electron concentration under strain.
Thus, a correlation between the exit of the last Landau level
of light electrons and the Lifshitz Transition has been found.
The result is that the critical magnetic field of the Electronic
Topological Transition has decreased; thereby, the magnetic
field range of the occurrence of magnetic-field-induced
instabilities associated with the last Landau level of electrons
has been extended. It should also be noted that a decrease in
the resistance in higher fields with the apparent metallization
of bismuth indicates possible changes in the mechanism of
carrier scattering associated also with the Lifshitz Transition
and with the substructure of the last Landau level of electrons.
condrea@nano.asm.mdMaterials Science and Nanotechnology