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Journal of Materials Science and Nanotechnology | Volume: 3
March 20-21, 2019 | London, UK
Materials Science and Materials Chemistry
2nd International Conference on
Non-volatile memory (NVM) can retrieve stored information
even when power is switched off. Among various next-
generation NVMs, Resistive Random Access Memory (RRAM)
seems promising for future applications, due to its high-
speed, high-efficiency, and energy-saving characteristics. In
recent years, the performance of RRAM has been significantly
improved through in-depth investigations in both materials and
related switching mechanisms. Although silicon-based memory
devices are being used since the last several decades for
storage, these devices have limited scale-up ability to increase
storage capacity. Thus, a continuous search for materials
that exhibit better memory characteristics like low switching
voltage, high stability, and low cost of fabrication is on-going.
In this regard, here we experimentally demonstrate non-
volatile resistive switching (RS) in pulsed laser deposited
BiYO3 (BYO) and BaBiO3 (BBO) thin films. The devices of these
oxides are prepared in Au/oxide/Pt architecture for electrical
measurements. Non-volatile resistance windows of ~10x (BYO)
and ~8.5x (BBO) were achieved at room temperature. Detailed
electrical and magneto-electrical measurements suggest that
the advantageof Au/BYO/Pt devices for RRAM is its high thermal
(10 K ≤ T ≤ 800 K) stability, while BBO devices are interesting
for next generation non-volatile memories due to its magnetic
functionality. The conduction mechanism of these devices is
explained using space charge limited current (SCLC) and Ohmic
conduction models.
Speaker Biography
Ratnamala Chatterjee has completed her PhD from Indian Institute of Technology Kanpur,
India and her Post Doctoral training from Massachusetts Institute of Technology, USA. She
is the professor of Indian Institute of Technology Delhi, India. She has over 200 publications
that have been cited over 2500 times, and his/her publication H-index is 25.
e:
Ratnamala Chatterjee
IIT Delhi, India
Non-volatile resistive switching in novel bismuth based oxides