12 / 13
allied
academies
Page 41
Notes:
Journal of Materials Science and Nanotechnology | Volume 3
October 07-08, 2019 | Frankfurt, Germany
Materials Science and Engineering
3
rd
International Conference on
Mater Sci Nanotechnol, Volume 3
ALD growth of MoS
2
nanosheets on TiO
2
nanotube supports
Hanna Sopha, Raul Zazpe, Milos Krbal, Filip Dvorak, Ludek Hromadko, Jan Prikryl
and
Jan M Macak
University of Pardubice, Czech Republic
T
he success of graphene opened a door for a new class of
chalcogenidematerials with unique properties that can be
applied in the semiconductor technology. Monolayers of two-
dimensional transition metal dichalcogenides (2D TMDCs)
possess a direct band gap that is crucial for optoelectronic
applications. Additionally, the direct band gap can be easily
tuned by either chemical composition or external stimuli.
Next to the optoelectronic applications, where a monolayer
planar structure is necessary to employ, a layer of standing
flakes, which possesses a large surface area, can be used for
hydrogen evolution a photodegradation of organic dyes or as
electrodes in Li ion batteries. MoS
2
, a typical representative
of TMDCs, has been widely studied for many applications.
Recently, the possibility to employ ALD as a technique to grow
MoS
2
has been reported.
The self-organized TiO
2
nanotube (TNT) layers have attracted
considerable scientific and technological interest over the
past 15 years motivated for their wide range of applications
including (photo-) catalysis, hydrogen generation and
biomedical uses. The synthesis of the 1D TNT layers is carried
out by a conventional electrochemical anodization of valve
Ti metal sheets in various electrolytes. The main drawback
of TiO
2
is its applicability in the UV light (wavelengths < 390
nm), thus TNT layers are often coated or decorated with
secondary materials. In the recent years, it has become clear
that atomic layer deposition (ALD) is the only approach that
enables the possibility of coating high aspect ratio structures
homogeneously with thin and ultrathin layers of secondary
materials. The presentation will focus on the decoration
of TNT layers with MoS
2
by ALD, their characterization and
applications in various fields. Experimental details and some
recent photocatalytic and battery results will be presented
and discussed.
Speaker Biography
Hanna Sopha graduated in chemistry at the University of Rostock
(Germany) in 2008. After she received Ph.D. degree in analytical
chemistry from the University of Ljubljana (Slovenia) in 2013, she joined
the University of Pardubice (Czech Republic) as a postdoctoral research
fellow in electroanalytical chemistry. Since 2015, she has been working
at the Centre of Materials and Nanotechnologies of the same university.
Her research is focused on the anodization of valve metals towards
novel nanotubular and nanoporous structures, as well as application and
functionalization of these structures. She has over 40 publications that
have been cited over 400 times, and her publication H-index is 14.
e:
hannaingrid.sopha@upce.cz