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Page 12

Journal of Biotechnology and Phytochemistry

Volume 1 Issue 3

Notes:

Chemistry World 2017

November 13-15, 2017 Athens, Greece

7

th

World Congress on

Chemistry

Junrong Zheng, J Biotech and Phyto 2017

Electron/hole transformation between two

atomic layers

E

lectron/hole

transformations

on

interfaces

determine fundamental properties of opto-electro-

chemical devices, but remain a grand challenge to

experimentally investigate and theoretically describe.

Herein combining ultrafast VIS/NIR/MIR frequency-

mixed micro-spectroscopy and state-of-the-art two-

dimensional atomic device fabrications, we are able

to directly monitor the phase transitions of charged

quasiparticles in real time on the ultimate interfaces –

between two atomic layers. On type II semiconductor/

semiconductor interfaces between two transition

metal dichalcogenide (TMDC) monolayers, interfacial

charge transfers occur within 50fs and interlayer

hot excitons (unbound interlayer e/h pairs) are the

necessary intermediate of the process for both energy

and momentum conservations. On semiconductor/

conductor (graphene) interfaces, interlayer charge

transfers result in an unexpected transformation of

conducting free carriers into insulating interlayer

excitons between the conducting graphene and the

semiconducting TMDC. The formation of interlayer

excitons significantly improves the charge separation

efficiency between the two atomic layers for more than

twenty times.

Biography

Junrong Zheng completed his PhD and postdoctoral studies from Stanford

University. He is professor of chemistry at Peking University, and a co-founder of

Uptek Solutions, a Long-Island-based laser company. He is a recipient of numerous

prestigious awards including the Sloan Fellowship, and the Packard Fellowship.

junrong@pku.edu.cn

Junrong Zheng

Peking University, China

Figure 1. Interlayer charge transfers between MoSe2/WS2 atomic layers.

The interlayer charge transfers (<50fs) result in the formation of interlayer hot

excitons, much faster than the formation of intralayer excitons (~600fs).