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Page 65

May 20-21, 2019 | Vienna, Austria

Biomaterials and Nanomaterials &

Materials Physics and Materials Science

International Conference on

Journal of Materials Science and Nanotechnology | Volume 3

Notes:

At the interface between nitride compounds and quantum materials

Alberta Bonanni

Johannes Kepler University Linz, Austria

emiconductor nitride compounds own their relevance,

not only to state-of-the-art applications in opto- and

high-power-electronics, but also to a number of features

particularly attractive for spintronics and spin-orbitronics,

enabling, e.g., spin-charge interconversion via spin-orbit

coupling associated with inversion asymmetry and leading to

a sizable Rashba field and piezoelectric properties. Through

the addition of magnetic dopants fostering the formation of

magnetic complexes or driving the system to the state of a

condensed magnetic semiconductor, these materials open

wide perspectives in both fundamental and application-

oriented research.

An overview is provided here on how, by controlling the

fabrication parameters and establishing a comprehensive

protocol of characterization involving also synchrotron-

radiation-based methods, we have unraveled and can now

control a number of relevant features of these systems.

Particularly significant in this context is the generation of

pure spin current at room temperature in nitride-based

bilayers, pointing at these systems as efficient spin current

generators. Besides controlling the self-aggregation and

performance of embedded functional magnetic nanocrystals

and of optically active complexes, we have proved that the

magnetization of dilute III-nitrides doped with transition

metals may be controlled electrically. In this way, the

piezoelectricity of wurtzite semiconductors and electrical

magnetization switching have been bridged. Prospects

for proximity-induced topological superconductivity in

heterostructures combining graded and Rashba III-nitrides

with layered s-wave superconductors are also discussed.