material-science-2019-accepted-abstracts

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Journal of Materials Science and Nanotechnology | Volume 3

February 25-26, 2019 | Paris, France

Materials Science and Engineering

International Conference on

2D semiconductor nanostructures at atomic scale

Arbiol J

Catalan Institute of Nanoscience and Nanotechnology (ICN2), Spain

echnology at the nanoscale has become one of the main

challenges in science as new physical effects appear and

can be modulated at will. Materials for spintronics, electronics,

optoelectronics, chemical sensing, and new generations of

functionalized materials are taking advantage of the low

dimensionality, improving their properties and opening a new

range of applications. As developments in materials science

are pushing to the size limits of physics and chemistry, there

is a critical need for understanding the origin of these unique

physical properties (optical and electronic) and relate them

to the changes originated at the atomic scale, e.g. linked

to changes in (electronic) structure of the material. In this

work, it has been demonstrated that how atomic resolution

high angle annular dark field (HAADF) scanning transmission

electron microscopy (STEM) can help to understand the

growth mechanisms of complex 2D nanostructures such as

nanomembranes, nanoflakes or nanobelts. The presentation

will combine the visualization of 3D atomic models recreating

the growth of these 2D nanostructures, as well as a direct

correlation between their structure and chemical composition

at the atomic scale, with their local properties at the nanoscale,

electronic and photonic and how they can be arranged as

perfect templates for quantum nanowire networks. In addition,

this work shows the in-situ dynamic reconstruction processes

of monolayer grain boundaries in MoS

at atomic scale under

the electron beam as well as the sulfurization evolution that

drive the transformation of a MoO

nanomembrane to a MoS

nanoflake.