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August 23-24, 2018 | Paris, France
Laser, Optics and Photonics
International Conference on
Journal of Materials Science and Nanotechnology | Volume: 2
Electronic ICs supporting high-speed optical transceivers for short-reach applications
Peter Ossieur1 , G Coudyzer1, H Ramon1, J Lambrecht1, M Vanhoecke1, L Breyne1, S Zhou2, S Facchin2, P D Townsend2, G Torfs1, X Yin 1,
and J Bauwelinck1
1Ghent University, Belgium
2Tyndall National Institute and University College Cork, Ireland
We present progress on high-speed driver and receiver
integrated circuits intended for high-capacity short-
reach links inside data centres. Optical transceivers for these
applications need to provide high baud rates, while being
highly energy efficient (<<10pJ/bit) and occupy small physical
footprints. Realization of such electronics in a CMOS process
offers the advantage of monolithic integration with large-
scale digital chips. The low (<1V) breakdown voltage of the
transistors in deep sub-micron CMOS limits the achievable drive
voltage, which may limit the optical modulation amplitude.
At the receiver side, it can be difficult to achieve low-noise,
high gain and wideband amplification. Integration into a
large-scale digital chip will require consideration of crosstalk
due to logic switching activity. In case analog performance is
important then SiGe BiCMOS processes can be considered.
Driver circuits need to generate sufficient current or voltage
swing into or across the electrical load presented by the
optical modulator, possibly overcoming breakdown limitations
of the used CMOS or SiGe BiCMOS processes. Examples
developed for VCSELs (vertical cavity surface emitting lasers),
Silicon Photonic microring resonators, electro-absorption
modulators, lumped Silicon Photonic and Indium Phosphide
travelling wave Mach-Zehnder modulators using deep sub-
micron CMOS and SiGe BiCMOS technologies are given.
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