The study on the selective electroplating of copper foil on the semiconductor

The study on the selective electroplating of copper foil on the semiconductor

2^nd International Conference on Materials Science and Engineering
February 25-26, 2019 | Paris, France

Szu Han Chao and Shih Chieh Hsu

Tamkang University, Taiwan

Scientific Tracks Abstracts : Mater Sci Nanotechnol

Abstract:

We successfully fabricated a pre-defined patterned copper (Cu) substrate for the thin-GaN light-emitting diodes (LEDs) without barriers by the selective electroplating technique in this study. The contours of the Cu bumps with different current density were measured, and we observed that the average thickness decreases with reinforcement of the current density. The current density under the condition between 40 and 80 mA/cm2 was proved to possess the best morphology in our experiments.

Biography:

Szu Han Chao is a PhD student in the department of Chemical and Materials Engineering at Tamkang University, Taiwan. Her major research interests are Raman, Light-emitting diodes and Optical simulation. This presentation is part of collaboration with her Professor Shih Chieh Hsu. He has completed his PhD at the age of 30 years from National Central University and postdoctoral studies from Research Center for Applied Sciences, Academia Sinica. He is the associate professor (2015-present), Department of Chemical and Materials Engineering, Tamkang University, Taiwan. He has published more than 20 papers in reputed journals and has been serving as an editorial board member of repute.

E-mail: ssuhanchao@gmail.com

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