Synthesis of Two-Dimensional Transition-Metal Dichalcogenides by Mist Chemical Vapor Deposition for Field-Effect Transistors

Synthesis of Two-Dimensional Transition-Metal Dichalcogenides by Mist Chemical Vapor Deposition for Field-Effect Transistors

Webinar on 6^th World Congress on Nanomaterials
January 13, 2022 | Webinar

Abdul Kuddus

Saitama University, Japan

Scientific Tracks Abstracts : Mater Sci Nanotechnol

Abstract:

Atomic layer two-dimensional transition-metal dichalcogenides (TMDs) have been attracted considerable interest owing to their strange properties together with unique structures that offers a wide range of applications in electronics, optoelectronics, photosensor, catalysis, spintronics and so on. The 2D-MoS2 and WS2 show the atomic scale thicknesses, free dangling bonds, higher chemical stability and a tunable band gap of ~1- 2 eV. In this work, synthesis of MoS2, WS2 and WS1-x Sex on He-plasma treated Al1-xTixOy has been investigated systematically by sequential Mist-Chemical Vapor Deposition (mist-CVD) and applied as channel layer of MOS-FETs. Ammonium tetrathiomolybdate (NH4)2MoS4 and Ammonium tetrathiotungstate (NH4)2WS4 were used as a precursor of MoS2 and WS2 respectively and N-methyl-2-pyrrolidone (NMP) as solvent. The prepared solution was supplied into the hot-wall reaction tube with Ar as generation and carrier gas containing H2 (25%) at furnace temperature (Tf) of 400-600°C. Subsequently, the sulfurization (Selenization) was executed for further improving the quality of the MoS2 or WS2 (WS1-xSex) flakes together with enhancing the crystallinity at Tf of 600°C for 20 min. Moreover, an efficient way of fabrication of atomic layer 2D TMDCs films with a comparable dimension is realized for the very first-time using mist-CVD with single precursor that can be applied as channel layer of MOS-FET.

Biography:

Abdul Kuddus received his BSc. Engineering and MSc. Engineering in Applied Physics and Electronic Engineering from University of Rajshahi, Bangladesh in 2015 and 2016, respectively. He joined as PhD fellow in Shirai Lab, Saitama University, Japan in 2019 and continue till to date. He has over 30 publications in renowned journals that have been cited over 150 times and his current research focuses on developing a new solution-processed deposition approach Mist Chemical Vapor Deposition (mist CVD) for Two-dimensional metal dichalcogenides and their application in electronic and optoelectronic devices; MOS-FETs, Photodetector, solar cells.

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