+44-7360-538437Growth technology of InGaN/GaN nanocolumn-array LED crystals on 2-inch AlN/Si substrates useful for integrated micro-LED fabrication
3rd International Conference on Applied Physics
August 23-24, 2018 | London, UK
Katsumi Kishino
Sophia University, Japan
Posters & Accepted Abstracts : J Appl Math Stat App
Abstract:
Using uniform arrays of GaN nanocolumns, monolithic integration of four-color InGaN-based nanocolumn LEDs has been demonstrated. Two-dimensional arrangement of such RGB micro-LEDs will, in principle, enable the fabrication of a semiconductor video panel, which function as a micro- LED display. The extended projection of the video image on a screen is expected to form a widescreen LED display. One of the basic technologies for achieving such micro-LED displays is the fabrication of InGaN-based nanocolumn LEDs on a widearea, for example 2-inch size or more, Si substrates. Si is easily removed from InGaN/GaN heterojunction crystals grown on them, enabling the flip-chip process of nanocolumn LED crystals. The wiring on top and bottom of the LED is suitable for a high-density integration of micro-LED pixcels, and costeffective fabrication of LED panels. In this study, triangularlattice nanopillar-array templates with a lattice constant of 280 nm and with AlN disks on top of the underlying Si pillars were prepared on 2-in. AlN/Si substrates through nanoimprint lithography and dry etching. Regularly arranged GaN nanocolumn arrays with a 220-nm diameter were grown on the templates to fabricate wide-area emission InGaN/GaN nanocolumn LEDs. An LED chip with an ITO electrode with an area of 3 × 4 mm2 operated at a current of 100 mA emitted blue-green light (504 nm in wavelength) from the entire surface of the large emission area. The growth technology developed here will contribute to the fabrication of twodimensionally arranged integrated nanocolumn micro-LEDs.
Biography:
E-mail:
kishino@sophia.ac.jpPDF HTML